This repository contains the report and supplementary material detailing the fundamental concepts, operation, advantages, disadvantages, and applications of three prominent next-generation ferroelectric memory technologies: FeRAM, FeFET, and FTJ.
The work explores how these devices address the scaling limitations of conventional memory and contribute to the ongoing evolution of the semiconductor industry under Moore's Law.
The report focuses on the structure and operational principles of the following devices:
| Device | Structure / Key Feature | Read Operation | Primary Advantage |
|---|---|---|---|
| FeRAM (Ferroelectric RAM) | 1T-1C structure | Destructive (requires re-write) | Fast access time, low power, high endurance |
| FeFET (Ferroelectric FET) | Gate dielectric replaced by ferroelectric material | Non-Destructive | Enhanced space efficiency, non-destructive read-out |
| FTJ (Ferroelectric Tunnel Junction) | Ultra-thin ferroelectric layer between two metallic electrodes | Resistive Switching (TER effect) | High resistive switching, excellent scaling possibilities |
- Operation: Stores binary data via ferroelectric polarization in a capacitor. Read pulse determines state inversion, requiring subsequent cell recovery.
- Drawbacks: Larger cell size (1T-1C footprint) and destructive read operation impede large-scale integration.
- Applications: Ideal for IoT devices, Smart Cards, and Industrial Control Systems due to rapid access and high security.
- Operation: Polarization of the ferroelectric gate dielectric manipulates the channel conductance (low/high resistivity), which persists without gate voltage.
- Drawbacks: Challenges with write endurance, material property dependence, and complex fabrication (depolarization, interdiffusion).
- Applications: Promising for Flash/Storage-Class Memory, Logic-in-Memory Systems, and Neuromorphic Computing.
- Operation: Polarization reversal alters the potential barrier height in the ultrathin ferroelectric film, leading to a significant change in tunneling resistance (Tunneling Electro Resistance - TER effect).
- Drawbacks: Performance is critically dependent on ultra-thin film thickness and interface quality; limited polarization stability affects retention.
- Applications: Potential for Non-volatile Memories, Field Data Loggers, and 3D Neuromorphic Computing due to resistive switching capabilities.
The advancement of FeFETs and FTJs is crucial for addressing scaling challenges in the semiconductor industry. Future research must focus on improving write endurance (FeFETs), optimizing film thickness and interface effects (FTJs), and leveraging their unique properties for integrated systems like 3D neuromorphic computing and advanced logic devices.
The concepts presented in this report are based on the following literature:
- Primary Focus: Research on FeRAM, FeFET, and FTJ architectures and operation.
- Images/Figures: References [2], [4], [6], and [7] were used for illustrative figures in the report.
- GitHub:
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